[Nanografi] Monolayer Graphene on SiO2/Si Substrate, Size: 4"
SKU:NG01CG0103
Monolayer Graphene on SiO2/Si Substrate Size: 4", Grain Size: 6-10 μm
Technical Properties of Graphene Film |
|
| Transparency | > 95 % |
| Coverage | > 93% |
| Thickness (theoretical) | 0.340 nm |
| Sheet Resistance | 500-530 Ohms/sq |
| Grain Size | 6-10 μm |
Technical Properties of SiO2/Si Substrate |
|
| Size (inch) | 4'' |
| Dry Oxide Thickness | 300 nm |
| Type | Phosphor doped / N type |
| Orientation | <100> |
| Resistivity | 0.001 - 0.01 |
| Thickness | 525 +/- 20 μm |
| Front surface | One Side Polished |
SEM Image of Monolayer Graphene
Raman Image Of Monolayer Graphene
Method of Preparation Graphene on Si/SiO2 Substrate was prepared by the following steps:
1) Single layer graphene grown on copper foil
2) Deposit PMMA and curing process
3) Remove Cu by etching process
4) Wash PMMA/Graphene in DI water
5) Redeposit PMMA/Graphene onto Si substrate and curing process
6) Remove PMMA with aceton
Applications
Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics;
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics.
