[Nanografi] Monolayer Graphene on SiO2/Si Substrate, Size: 4"

[Nanografi]  Monolayer Graphene on SiO2/Si Substrate, Size: 4"

SKU:NG01CG0103

 

Monolayer Graphene on SiO2/Si Substrate Size: 4", Grain Size: 6-10 μm

Technical Properties of Graphene Film
Transparency	> 95 %
Coverage	> 93%
Thickness (theoretical)	0.340 nm
Sheet Resistance	500-530 Ohms/sq
Grain Size	6-10 μm
Technical Properties of SiO2/Si Substrate
Size (inch)	4''
Dry Oxide Thickness	300 nm
Type	Phosphor doped / N type
Orientation	<100>
Resistivity	0.001 - 0.01
Thickness	525 +/- 20 μm
Front surface	One Side Polished

SEM Image of Monolayer Graphene

Raman Image Of Monolayer Graphene 

Method of Preparation  Graphene on Si/SiO2 Substrate was prepared by the following steps:

1) Single layer graphene grown on copper foil

2) Deposit PMMA and curing process

3) Remove Cu by etching process

4) Wash PMMA/Graphene in DI water

5) Redeposit PMMA/Graphene onto Si substrate and curing process

6) Remove PMMA with aceton

Applications

Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics;
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics.