SensingApplications2 [Graphena] mGFET-4D for Sensing applications [Graphena] mGFET-4D for Sensing applications TYPICAL SPECIFICATIONS · Growth method: CVD synthesis · Polymer assisted transfer · Die dimensions: 4 mm x 4 mm · Chip thickness: 525 μm · Number of channels per chip: 28 · Gate Oxide thickness: 90 nm · Gate Oxide material: SiO2 · Resistivity of substrate: 1-10 Ω·cm · Metallization: Au contacts · Encapsulation: 50 nm Al2O3 · Graphene field-effect mobi.. 2023. 6. 26. [Graphenea] mGFET-4P for Sensing applications [Graphenea] mGFET-4P for Sensing applications APPLICATIONS Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications. Depending on the application, mGFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as graphene devi.. 2022. 7. 14. 이전 1 다음
