SensingApplication1 [Graphenea] mGFET-4P for Sensing applications [Graphenea] mGFET-4P for Sensing applications TYPICAL SPECIFICATIONS · Growth method: CVD synthesis · Polymer assisted transfer · Die dimensions: 4 mm x 4 mm · Chip thickness: 525 μm · Number of channels per chip: 28 · Gate Oxide thickness: 90 nm · Gate Oxide material: SiO2 · Resistivity of substrate: 1-10 Ω·cm · Metallization: Au contacts · Encapsulation: 200 nm Glutarimide-based polymer · Grap.. 2024. 2. 15. 이전 1 다음
