[Graphenea] Monolayer Graphene on 90 nm SiO₂/Si

[Graphenea] Monolayer Graphene on 90 nm SiO₂/Si

 

GRAPHENE FILM

• · Growth method: CVD synthesis
• · Appearance (color): Transparent
• · Transparency: > 97%
• · Coverage: > 95%
• · Number of graphene layers: 1
• · Thickness (theoretical): 0.345 nm
• · AFM Thickness (air @RT): <1nm
• · Electron Mobility on SiO2/Si: ≈1500 cm2/V·s
• · Sheet Resistance on SiO₂/Si: 450±40 Ohms/sq (1cm x1cm)
• · Grain size: Up to 20 μm

SUBSTRATE SIO₂/SI 

• · Dry Oxide Thickness (both sides): 90 nm (+/-5%)
• · Type/Dopant: P/B
• · Orientation: <100>
• · Resistivity: 1-10 ohm·cm
• · Thickness 4" wafer: 525 +/- 20 μm
• · Thickness 6" wafer: 675 +/- 20 μm
• · Front surface: Polished
• · Dielectric Constant of the SiO2 layer: 3.9

QUALITY CONTROL

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene. All our CVD materials are processed in Clean Room Class 1000. Each batch must pass the following tests:

• · Raman Spectroscopy on each batch: I(G)/I(2D)<0.7; I(D)/I(G)<0.1
• · Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific controls (AFM, SEM...) please do not hesitate to contact us.

APPLICATIONS

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS

 

 

Monolayer Graphene on SiO₂/Si - Fully Covered - Processed in Clean Room Class 1000

Our monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (90nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market - not only for its excellent quality, but also for its shape, size and number of applications.